Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation

Author:

Jóźwik Przemysław12ORCID,Cardoso José P. S.3ORCID,Carvalho Diogo F.34ORCID,Correia Maria R. P.3ORCID,Sequeira Miguel C.15ORCID,Magalhães Sérgio1ORCID,Faye Djibril Nd.16ORCID,Grygiel Clara7ORCID,Monnet Isabelle7ORCID,Bross Adam S.8,Wetzel Christian8ORCID,Alves Eduardo1ORCID,Lorenz Katharina16ORCID

Affiliation:

1. Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico-Campus Tecnológico e Nuclear, Universidade de Lisboa, Estrada Nacional 10, 2695-066 Bobadela, Portugal

2. National Centre for Nuclear Research, Soltana 7, 05-400 Otwock, Poland

3. Departamento de Física & i3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal

4. INL – International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal

5. IBC, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany

6. Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias, Rua Alves Redol 9, 1000-029 Lisbon, Portugal

7. Center of Research on Ions Materials and Photonics, Atomic Energy Commission-National Centre for Scientific Research-Caen High Scool of Engineering-Normandy University, National Large Accelerator of Heavy Ions, Bd Henri Becquerel, BP 65133, 14076 Caen Cedex 5, France

8. Department of Materials Science and Engineering & Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA

Abstract

350 nm and 550 nm thick InGaN/GaN bilayers were irradiated with different energies (from ∼82 to ∼38 MeV) of xenon (129Xe) ions and different fluences of 1.2 GeV lead (208Pb) ions, respectively.

Funder

Fundação para a Ciência e a Tecnologia

European Regional Development Fund

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Impact of swift heavy ion irradiation on as-grown gallium nitride epilayers by MOCVD technique;Radiation Physics and Chemistry;2024-03

2. Monte Carlo simulations of ion channeling in the presence of dislocation loops: New development in the McChasy code;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-05

3. Radiation damage in GaN/AlGaN and SiC electronic and photonic devices;Journal of Vacuum Science & Technology B;2023-04-19

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