Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors-Reference-Cited by-同舟云学术

Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors

Published:2024 Issue: Volume: Page:
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Kim Minjae¹^ORCID,Lee Yongsu²,Kim Kyuheon¹,Pham Giang-Hoang³,Kim Kiyung¹,Jun Jae Hyeon¹,Lee Hae-won¹,Yoon Seongbeen¹,Hwang Hyeon Jun⁴,Sung Myung Mo³^ORCID,Lee Byoung Hun¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea

2. Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup-si, Jeolabuk-do, 56212, Republic of Korea

3. Department of Chemistry, Hanyang University, Wangsimni-ro 222, Seongdong-gu, Seoul 04763, Republic of Korea

4. Department of Semiconductor Engineering, Mokpo National University, 1666, Yeongsan-ro, Cheonggye-myeon, Muan-gun, Jeollanam-do 58554, Republic of Korea

Abstract

This study proposes an ultrathin tellurium (Te) atomic layer deposition process with a TeOx seed layer to overcome large electrical hysteresis. It also identifies causes of defects, aiding high-performance p-type inorganic transistors.

Funder

Ministry of Science and ICT, South Korea

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NH/D4NH00339J

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