Electron tunneling through grain boundaries in transparent conductive oxides and implications for electrical conductivity: the case of ZnO:Al thin films-Reference-Cited by-同舟云学术

Electron tunneling through grain boundaries in transparent conductive oxides and implications for electrical conductivity: the case of ZnO:Al thin films

Published:2018 Issue:4 Volume:5 Page:715-726
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Nguyen Viet Huong¹²³⁴⁵^ORCID,Gottlieb Ulrich¹²³⁴⁵,Valla Anthony¹⁶⁷⁸⁹,Muñoz Delfina¹⁶⁷⁸⁹,Bellet Daniel¹²³⁴⁵,Muñoz-Rojas David¹²³⁴⁵^ORCID

Affiliation:

1. Univ. Grenoble Alpes

2. CNRS

3. Grenoble INP

4. LMGP

5. F-38000 Grenoble

6. CEA

7. LITEN

8. INES

9. Le Bourget-du-Lac

Abstract

A new model is presented to describe charge scattering at grain boundaries in degenerately doped polycrystalline semiconductors such as transparent conductive oxides.

Funder

Agence Nationale de la Recherche

FP7 People: Marie-Curie Actions

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/MH/C8MH00402A

Reference57 articles.

1. Past achievements and future challenges in the development of optically transparent electrodes

2. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation