Research progress on two-dimensional indium selenide crystals and optoelectronic devices-Reference-Cited by-同舟云学术

Research progress on two-dimensional indium selenide crystals and optoelectronic devices

Published:2024 Issue:28 Volume:12 Page:16952-16986
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Zheng Dan¹²^ORCID,Chen Peng¹²,Liu Yi¹²,Li Xing¹²,Liu Kejing¹²,Yin Zi'ang¹²,Frisenda Riccardo³^ORCID,Zhao Qinghua¹²⁴^ORCID,Wang Tao¹²⁴^ORCID

Affiliation:

1. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, P. R. China

2. Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, Xi'an, 710072, P. R. China

3. Physics Department, Sapienza University of Rome, 00185 Rome, Italy

4. Research & Development Institute of Northwestern Polytechnical University in Shenzhen, Shenzhen, 518063, P. R. China

Abstract

2D InSe, a novel semiconductor with unique and excellent performance. It is pivotal for designing multifunctional devices for future optoelectronics, sensors, and flexible electronics, marking a significant advancement in materials science.

Funder

National Natural Science Foundation of China

Key Research and Development Projects of Shaanxi Province

Basic and Applied Basic Research Foundation of Guangdong Province

State Key Laboratory of Solidification Processing

Fundamental Research Funds for the Central Universities

Shenzhen Science and Technology Innovation Program

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TA/D4TA01584C

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4. Honeycomb Carbon: A Review of Graphene

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