Reduced carrier–phonon scattering and enhanced absorption in silver-doped transition metal dichalcogenide photodetectors-Reference-Cited by-同舟云学术

Reduced carrier–phonon scattering and enhanced absorption in silver-doped transition metal dichalcogenide photodetectors

Published:2025 Issue:20 Volume:49 Page:8239-8249
ISSN:1144-0546
Container-title:New Journal of Chemistry
language:en
Short-container-title:New J. Chem.

Author:

Reza Md Samim¹^ORCID,Devi Henam Sylvia¹²^ORCID,Majumdar Shubhangi³^ORCID,Kaur Maninder¹^ORCID,Chowdhury Pramit Kumar³^ORCID,Singh Madhusudan¹^ORCID

Affiliation:

1. Functional Materials & Devices Laboratory, Department of Electrical Engineering, IIT Delhi, New Delhi, NCT, 110 016, India

2. Department of Chemistry, Dhanamanjuri University, Imphal, Manipur, 795001, India

3. Department of Chemistry, IIT Delhi, New Delhi, NCT, 110 016, India

Abstract

Bulk tungsten disulfide, an indirect band gap semiconductor, has low optical absorbance, which can be overcome through silver doping, for applications in high-performance photodetection.

Funder

Ministry of Education, India

Indian Institute of Technology Delhi

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2025/NJ/D4NJ05435K

Reference103 articles.

1. High-Mobility Flexible Transistors with Low-Temperature Solution-Processed Tungsten Dichalcogenides

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3. PtS-decorated WS2 microflakes based sensors for selective ammonia detection at room temperature

4. High-performance monolayer MoS₂ photodetector enabled by oxide stress liner using scalable chemical vapor growth method

5. A heterostructured WS2/WSe2 catalyst by heterojunction engineering towards boosting hydrogen evolution reaction