Few-monolayer Ga film on Si(111): illusive gallenene formation and localization instead of superconductivity-Reference-Cited by-同舟云学术

Few-monolayer Ga film on Si(111): illusive gallenene formation and localization instead of superconductivity

Published:2023 Issue:5 Volume:8 Page:604-610
ISSN:2058-9689
Container-title:Molecular Systems Design & Engineering
language:en
Short-container-title:Mol. Syst. Des. Eng.

Author:

Bondarenko L. V.¹,Tupchaya A. Y.¹,Vekovshinin Y. E.¹^ORCID,Gruznev D. V.¹,Mihalyuk A. N.¹²^ORCID,Denisov D. V.¹,Matetskiy A. V.¹³,Olyanich D. A.¹,Utas T. V.¹,Zhdanov V. S.¹,Zotov A. V.¹,Saranin A. A.¹^ORCID

Affiliation:

1. Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia

2. Institute of High Technologies and Advanced Materials, Far Eastern Federal University, 690950 Vladivostok, Russia

3. Instituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, I-34149 Trieste, Italy

Abstract

Si(111) substrates crucially affect the superconducting properties of few-atomic-layer Ga films and formation of the gallenene analogue of graphene.

Funder

Russian Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Industrial and Manufacturing Engineering,Process Chemistry and Technology,Energy Engineering and Power Technology,Biomedical Engineering,Chemical Engineering (miscellaneous),Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2023/ME/D2ME00251E

Reference43 articles.

1. Superconductivity in one-atomic-layer metal films grown on Si(111)

2. Magnetoresistance Measurements of a Superconducting Surface State of In-Induced and Pb-Induced Structures on Si(111)

3. Review of 2D superconductivity: the ultimate case of epitaxial monolayers

4. Macroscopic Superconducting Current through a Silicon Surface Reconstruction with Indium Adatoms:Si(111)−(7×3)−In

5. Superconducting Phase Transition of the Si(111)-(\(\sqrt{7} \times \sqrt{3} \))-In Surface: Solution of Tc Discrepancy

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