A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD
Author:
Affiliation:
1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics
2. School of Physics
3. Peking University
4. Beijing 100871
5. China
6. Dongguan Institute of Optoelectronics
7. Dongguan
Abstract
A study of GaN nucleation and coalescence behaviors in the initial growth stages on nanoscale patterned sapphire substrates (NPSS) is presented.
Funder
National Natural Science Foundation of China
Beijing Municipal Science and Technology Commission
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2018/CE/C8CE01450G
Reference44 articles.
1. Low-dislocation-density GaN from a single growth on a textured substrate
2. Surface evolution and effect of V/III ratio modulation on etch-pit-density improvement of thin AlN templates on nano-patterned sapphire substrates by metalorganic chemical vapor deposition
3. Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates
4. Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
5. InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate
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