Modeling of phosphorus diffusion in silicon oxide and incorporation in silicon nanocrystals-Reference-Cited by-同舟云学术

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Modeling of phosphorus diffusion in silicon oxide and incorporation in silicon nanocrystals

Published:2016 Issue:16 Volume:4 Page:3531-3539
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Mastromatteo Massimo¹²³⁴,De Salvador Davide¹²³⁴,Napolitani Enrico¹²³⁴^ORCID,Arduca Elisa⁵⁶⁷⁴⁸,Seguini Gabriele⁵⁶⁷⁴,Frascaroli Jacopo⁵⁶⁷⁴⁸,Perego Michele⁵⁶⁷⁴,Nicotra Giuseppe⁶⁹⁴,Spinella Corrado⁶⁹⁴,Lenardi Cristina⁸¹⁰¹¹⁴,Carnera Alberto¹²³⁴

Affiliation:

1. Dipartimento di Fisica e Astronomia

2. Università degli Studi di Padova and CNR-IMM MATIS

3. I-35131 Padova

4. Italy

5. Laboratorio MDM

6. IMM-CNR

7. I-20864 Agrate Brianza

8. Dipartimento di Fisica

9. I-95121 Catania

10. Università degli Studi di Milano

11. I-20100 Milano

Abstract

A complete description and modelization of P diffusion in SiO₂ and P trapping in Si NCs embedded in the SiO₂ matrix.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC04287A

Reference58 articles.

1. P. Pichler , in Intrinsic Point Defects, Impurities and their Diffusion in Silicon, ed. S. Selberherr, Springer, Wien, 2004, ch. XX

2. Doping semiconductor nanocrystals

3. Impurities Enhance Semiconductor Nanocrystal Performance

4. Doped Nanocrystals

5. International Technology Roadmap for Semiconductors ITRS, http://www.itrs.net (accessed November 2015)

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local Enhancement of Dopant Diffusion from Polycrystalline Silicon Passivating Contacts;ACS Applied Materials & Interfaces;2022-04-05

2. Phosphorus precursors reactivity versus hydrogenated Ge surface: towards a reliable self-limited monolayer doping;Applied Surface Science;2021-03

3. Doping of silicon with phosphorus end-terminated polymers: source characterization and dopant diffusion in SiO2;Journal of Materials Chemistry C;2021

4. Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer;Nanoscale Research Letters;2020-02-10

5. Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants;Journal of Materials Chemistry C;2020

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