Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(0001̄) and 4H-SiC(0001) substrates by chemical vapor deposition-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(0001̄) and 4H-SiC(0001) substrates by chemical vapor deposition

Published:2022 Issue:41 Volume:51 Page:15974-15982
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Souqui Laurent¹^ORCID,Sharma Sachin¹^ORCID,Högberg Hans¹^ORCID,Pedersen Henrik¹^ORCID

Affiliation:

1. Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden

Abstract

Boron carbide in its rhombohedral form (r-B4C) is grown epitaxially by chemical vapor deposition on 4H-SiC.

Funder

Linköpings Universitet

Stiftelsen för Strategisk Forskning

Carl Tryggers Stiftelse för Vetenskaplig Forskning

Vetenskapsrådet

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/DT/D2DT02107B

Reference39 articles.

1. Some properties of single-crystal boron carbide

2. Boron carbide—A comprehensive review

3. Defect clustering and self-healing of electron-irradiated boron-rich solids

4. Unusual properties of icosahedral boron-rich solids

5. Optical properties of boron carbide and comparison with β-rhombohedral boron

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarity Effect on the Heteroepitaxial Growth of B<sub>x</sub>C on 4H-SiC by CVD;Solid State Phenomena;2024-08-27

2. On the origin of epitaxial rhombohedral-B₄C growth by CVD on 4H-SiC;Dalton Transactions;2024

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP