High-quality β-(AlxGa1−x)2O3 thin films on sapphire substrates by face-to-face annealing-Reference-Cited by-同舟云学术

High-quality β-(Al_xGa_1−x)₂O₃ thin films on sapphire substrates by face-to-face annealing

Published:2024 Issue:19 Volume:26 Page:2544-2550
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wu Songhao¹²,Ma Chicheng²³,Yang Han¹²,Liu Zichun¹²,Ma Yuanxiao¹,Yao Ran²³,Zhang Yiyun²³^ORCID,Yang Hua²³,Yi Xiaoyan²³,Wang Junxi²³,Wang Yeliang¹

Affiliation:

1. The School of Integrated Circuits and Electronics and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China

2. R&D Center for Solid-state Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

High-quality β-(Al0.68Ga0.32)2O3 (288 arcsec) films have been fabricated through face-to-face annealing on a sapphire substrate which is covered with epitaxial Ga2O3.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CE/D4CE00263F

Reference50 articles.

1. Growing of bulk β-(Al x Ga1−x )2O3 crystals from the melt by Czochralski method and investigation of their structural and optical properties

2. MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping

3. (AlxGa1-x)2O3-based materials: Growth, properties, and device applications

4. Growth and Band Gap Control of Corundum-Structured $\alpha$-(AlGa)$_{2}$O$_{3}$ Thin Films on Sapphire by Spray-Assisted Mist Chemical Vapor Deposition

5. Heteroepitaxial growth of β-Ga2O3 thin films on c-plane sapphire substrates with β-(AlxGa1-x)2O3 intermediate buffer layer by mist-CVD method