Suppression of the redox reaction between the IGZO surface and the reducing agent TMA using fluorine oxidizing agent treatment

Author:

Jang Yuseong1ORCID,Lee Jinkyu1,Mok Jinsung1,Park Junhyeong1ORCID,Shin Seung Yoon1,Lee Soo-Yeon1ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea

Abstract

This study proposes that the post-deposition oxidation of the IGZO surface is essential to counteract the oxygen-scavenging behavior of TMA, a common Al precursor for ALD-Al2O3.

Funder

Ministry of Science and ICT, South Korea

Samsung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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