Recent progress in 2D group-VA semiconductors: from theory to experiment-Reference-Cited by-全球学者库

Recent progress in 2D group-VA semiconductors: from theory to experiment

Published:2018 Issue:3 Volume:47 Page:982-1021
ISSN:0306-0012
Container-title:Chemical Society Reviews
language:en
Short-container-title:Chem. Soc. Rev.

Author:

Zhang Shengli¹²³⁴⁵,Guo Shiying¹²³⁴⁵,Chen Zhongfang⁶⁷⁸⁹¹⁰^ORCID,Wang Yeliang¹¹¹²¹³¹⁴^ORCID,Gao Hongjun¹¹¹²¹³¹⁴,Gómez-Herrero Julio¹⁵¹⁶¹⁷¹⁸,Ares Pablo¹⁵¹⁶¹⁷¹⁸^ORCID,Zamora Félix¹⁹¹⁶¹⁷¹⁸^ORCID,Zhu Zhen²⁰²¹²²¹⁰^ORCID,Zeng Haibo¹²³⁴⁵^ORCID

Affiliation:

1. MIIT Key Laboratory of Advanced Display Materials and Devices

2. Ministry of Industry and Information Technology

3. Institute of Optoelectronics & Nanomaterials

4. Nanjing University of Science and Technology

5. Nanjing

6. Department of Chemistry

7. Institute for Functional Nanomaterials

8. University of Puerto Rico

9. San Juan

10. USA

11. Institute of Physics and University of Chinese Academy of Sciences

12. Chinese Academy of Sciences

13. Beijing 100190

14. China

15. Departamento de Física de la Materia Condensada

16. Universidad Autónoma de Madrid

17. Madrid E 28049

18. Spain

19. Departamento de Química Inorgánica

20. Materials Department

21. University of California

22. Santa Barbara

Abstract

This review provides recent theoretical and experimental progress in the fundamental properties, electronic modulations, fabrications and applications of 2D group-VA materials.

Funder

National Natural Science Foundation of China

Research Grants Council, University Grants Committee

Natural Science Foundation of Jiangsu Province

U.S. Department of Defense

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CS/C7CS00125H

Reference361 articles.