Emerging trends in van der Waals 2D TMD heterojunction bipolar transistors-Reference-Cited by-同舟云学术

Emerging trends in van der Waals 2D TMD heterojunction bipolar transistors

Published:2023 Issue:5 Volume:11 Page:1648-1667
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Aftab Sikandar¹^ORCID,Hegazy Hosameldin Helmy²³^ORCID,Iqbal Muhammad Zahir⁴^ORCID,Rim You Seoung⁵⁶^ORCID

Affiliation:

1. Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, South Korea

2. Research Center for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia

3. Department of Physics, Faculty of Science, King Khalid University, P. O. Box 9004, Abha, Saudi Arabia

4. Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan

5. Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea

6. Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea

Abstract

The bipolar junction transistor, has become an essential component for many modern circuits that are used for high-speed computing and communication, which is due to its ability of being able to amplify high-power signals.

Funder

National Research Foundation of Korea

Ministry of Science and ICT, South Korea

Research Center for Advanced Materials Science, King Khalid University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D2TC04108A

Reference85 articles.

1. B. G.Streetman and S.Banerjee , Solid state electronic devices , Pearson , Prentice Hall Upper Saddle River , 2006

2. Emerging trends in 2D TMDs with a broken gap interface

3. Recent advances in TMD interfaces with seamless contacts

4. Switching photodiodes based on (2D/3D) PdSe2/Si heterojunctions with a broadband spectral response

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic properties, interface contact and transport properties of strain-modulated MS2/borophosphene and MSeS/borophosphene (M = Cr, Mo, W) heterostructure: Insights from first-principles;Applied Surface Science;2024-04

2. Stimuli-responsive and self-healing supramolecular Zn(ii)–guanosine metal–organic gel for Schottky barrier diode application;Soft Matter;2024

3. Polymer-Waveguide-Integrated 2D Semiconductor Heterostructures for Optical Communications;Nano Letters;2023-11-21