Thermoelectric properties of GaN with carrier concentration modulation: an experimental and theoretical investigation
Author:
Affiliation:
1. Inter-University Accelerator Centre
2. New Delhi
3. India
4. Toyota Technological Institute
5. Nagoya 468-8511
6. Japan
7. Department of Mechanical Engineering
8. IISc Bangalore
Abstract
The present work investigates the less explored thermoelectric properties of the n-type GaN semiconductor by combining both experimental and computational tools.
Funder
Department of Science and Technology, Ministry of Science and Technology
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2021/CP/D0CP03950K
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4. Transport properties of two finite armchair graphene nanoribbons
5. Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes
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