Theoretical design of rhombohedral-stacked MoS<sub>2</sub>-based ferroelectric tunneling junctions with ultra-high tunneling electroresistances-Reference-Cited by-同舟云学术

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Theoretical design of rhombohedral-stacked MoS₂-based ferroelectric tunneling junctions with ultra-high tunneling electroresistances

Published:2024 Issue:34 Volume:26 Page:22549-22557
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Hu Huamin¹^ORCID,Zeng Guang¹,Ouyang Gang²^ORCID

Affiliation:

1. School of Materials Science and Engineering, Changsha University of Science and Technology, Changsha 410114, China

2. Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China

Abstract

The Schottky barrier and TER of a Gra/2R-MoS2 heterojunction can be regulated by switching sliding ferroelectric polarization.

Funder

Natural Science Foundation of Hunan Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP02278E

Reference46 articles.

1. Engineering symmetry breaking in 2D layered materials

2. Ferroelectric order in van der Waals layered materials

3. Magnetoelectric Coupling in Multiferroic Bilayer VS2

4. Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides

5. Binary Compound Bilayer and Multilayer with Vertical Polarizations: Two-Dimensional Ferroelectrics, Multiferroics, and Nanogenerators

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