Shallow implanted SiC spin qubits used for sensing an internal spin bath and external YIG spins-Reference-Cited by-同舟云学术

Shallow implanted SiC spin qubits used for sensing an internal spin bath and external YIG spins

Published:2021 Issue:32 Volume:13 Page:13827-13834
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Tribollet Jérôme¹^ORCID,Muller Dominique²,Roques Stéphane²,Bartringer Jérémy²,Fix Thomas²^ORCID

Affiliation:

1. Institut de Chimie de Strasbourg, Université de Strasbourg et CNRS, UMR 7177, 4 rue Blaise Pascal, CS 90032, F-67081 Strasbourg Cedex, France

2. Laboratoire Icube, Université de Strasbourg et CNRS, UMR 7357, 23 rue du Loess, BP 20, 67037 Strasbourg Cedex 2, France

Abstract

Shallow VSi (V2) spin qubits are created below the SiC surface by low energy ion implantation through a sacrificial SiO2 layer. A shallow V2 spin coherence time of 220 μs at 100 K is demonstrated, as well as sensing of external YIG spins.

Funder

Université de Strasbourg

Centre National de la Recherche Scientifique

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR02877D

Reference21 articles.

1. Coherent control of single spins in silicon carbide at room temperature

2. Locking of electron spin coherence above 20 ms in natural silicon carbide

3. Electron spin coherence of silicon vacancies in proton-irradiated 4 H -SiC

4. High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

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