High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors-Reference-Cited by-同舟云学术

High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors

Published:2023 Issue:34 Volume:11 Page:11688-11696
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Bestelink Eva¹^ORCID,Sihapitak Pongsakorn¹²^ORCID,Zschieschang Ute³,Askew Leslie¹,Shannon John M.¹,Bermundo Juan Paolo²^ORCID,Uraoka Yukiharu²,Klauk Hagen³^ORCID,Sporea Radu A.¹^ORCID

Affiliation:

1. Advanced Technology Institute, School of Computer Science and Electronic Engineering, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, UK

2. Division of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

3. Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany

Abstract

Complementary inverters using IGZO n-channel and DNTT p-channel source-gated transistors are demonstrated for the first time. They exhibit gain of 368 V V−1, 94% noise margin and matching on-current for relatively similar widths.

Funder

Japan Society for the Promotion of Science

Engineering and Physical Sciences Research Council

Royal Society

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC02474A

Reference46 articles.

1. A hardwired machine learning processing engine fabricated with submicron metal-oxide thin-film transistors on a flexible substrate