Memristors based on multilayer graphene electrodes for implementing a low-power neuromorphic electronic synapse

Author:

Yan Xiaobing12345ORCID,Cao Gang12345,Wang Jingjuan12345,Man Menghua6789,Zhao Jianhui12345,Zhou Zhenyu12345,Wang Hong12345,Pei Yifei12345,Wang Kaiyang12345,Gao Chao12345,Lou Jianzhong12345,Ren Deliang12345,Lu Chao10111213ORCID,Chen Jingsheng14151617ORCID

Affiliation:

1. National-Local Joint Engineering Laboratory of New Energy Photovoltaic Devices

2. Key Laboratory of Digital Medical Engineering of Hebei Province

3. College of Electron and Information Engineering

4. Hebei University

5. Baoding 071002

6. National Key Laboratory on Electromagnetic Environment Effects

7. Army Engineering University

8. Shijiazhuang 050000

9. China

10. Department of Electrical and Computer Engineering

11. Southern Illinois University Carbondale

12. Carbondale

13. USA

14. Department of Materials Science and Engineering

15. National University of Singapore

16. Singapore 117576

17. Singapore

Abstract

The Ta/Ta2O5/AlN/graphene memristor with silicon-based multilayer graphene films as the bottom electrode has stable electrical characteristics.

Funder

National Natural Science Foundation of China

Hebei University

Institute of Microelectronics of the Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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