Interfacial profile of axial nanowire heterostructures in the nucleation limited regime-Reference-Cited by-同舟云学术

Interfacial profile of axial nanowire heterostructures in the nucleation limited regime

Published:2022 Issue:46 Volume:24 Page:8052-8059
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Leshchenko E. D.¹,Johansson J.¹^ORCID

Affiliation:

1. Solid State Physics and NanoLund, Lund University, P O Box 118, SE-221 00 Lund, Sweden

Abstract

We report thermodynamic modeling of the formation of axial III–V nanowire heterostructures grown by the self-catalyzed and Au-catalyzed vapor–liquid–solid methods.

Funder

NanoLund, Lunds Universitet

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CE/D2CE01337A

Reference40 articles.

1. A review of nanowire growth promoted by alloys and non-alloying elements with emphasis on Au-assisted III–V nanowires

2. Semiconductor nanowires: to grow or not to grow?

3. Synthesis and Applications of III–V Nanowires

4. Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures

5. Control of III–V nanowire crystal structure by growth parameter tuning

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