Electronic structure of α-sexithiophene ultrathin films grown on-Reference-Cited by-同舟云学术

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Electronic structure of α-sexithiophene ultrathin films grown on

Published:2018 Issue:2 Volume:20 Page:1114-1126
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Ohno Shinya¹²³⁴^ORCID,Tanaka Hiroya¹²³⁴,Tanaka Kazuma¹²³⁴,Takahashi Kazutoshi⁵⁶⁷⁴^ORCID,Tanaka Masatoshi¹²³⁴^ORCID

Affiliation:

1. Faculty of Engineering

2. Yokohama National University

3. Yokohama 240-8501

4. Japan

5. Synchrotron Light Application Center

6. Saga University

7. Saga 840-8502

Abstract

We investigated the electronic states of α-sexithiophene (α-6T) on by means of angle-resolved photoelectron spectroscopy using synchrotron radiation.

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C7CP05222G

Reference59 articles.

1. Weakly bound and strainedC60monolayer on theSi(111)3×3R30°−Agsubstrate surface

2. Adsorption of cobalt phthalocyanine on Ag terminated Si(111)

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4. Controlling molecular deposition and layer structure with supramolecular surface assemblies

5. Scanning tunneling microscopy study of pentacene adsorption on Ag/Si(1 1 1)-(√3 × √3)R30°

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4. Energetic disorder impacts energy-level alignment of alpha-sexithiophene on hydrogen-terminated silicon and silicon oxide;Materials Research Express;2022-08-01

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