The AlN lattice-polarity inversion in a high-temperature-annealed <i>c</i>-oriented AlN/sapphire originated from the diffusion of Al and O atoms from sapphire-Reference-Cited by-同舟云学术

The AlN lattice-polarity inversion in a high-temperature-annealed c-oriented AlN/sapphire originated from the diffusion of Al and O atoms from sapphire

Published:2024 Issue:2 Volume:6 Page:418-427
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Jiang Ke¹²,Ben Jianwei¹²,Sun Xiaojuan¹²^ORCID,Shi Zhiming¹²^ORCID,Wang Xianjun¹²,Fang Tong¹²,Zhang Shanli¹²,Lv Shunpeng¹²,Chen Yang¹²^ORCID,Jia Yuping¹²,Zang Hang¹²,Liu Mingrui¹²,Li Dabing¹²^ORCID

Affiliation:

1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, P. R. China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China

Abstract

The polarity inversion in high-temperature annealed c-oriented AlN/sapphire is originated from the diffusion of the Al and O atoms from the sapphire.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Jilin Province

Youth Innovation Promotion Association of the Chinese Academy of Sciences

China Association for Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject