Abstract
A method to distinguish between two symmetrically equivalent opposite (11{\overline 2}0) and ({\overline 1}{\overline 1}20) faces of ana-plane sapphire wafer is described. It is shown that use of conventional X-ray diffraction analysis makes it possible to determine the `sign' of the sapphireaface in contrast to the `sign' of thec,morrfaces. Correct determination of thea-plane wafer orientation is important for further growth and processing of heteroepitaxial structures.
Funder
Russian Science Foundation
Publisher
International Union of Crystallography (IUCr)
Subject
General Biochemistry, Genetics and Molecular Biology
Reference16 articles.
1. (0001) oriented GaN epilayer grown on sapphire by MOCVD
2. Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
3. Dobrovinskaia, E. R., Litvinov, L. A. & Pischik, V. (2002). Sapphire and Other Corundum Crystals. Kharkiv: Institute for Single Crystals.
4. Dobrovinskaia, E. R., Lytvynov, L. A. & Pishchik, V. (2009). Sapphire: Material, Manufacturing, Applications. New York: Springer.
5. Epitaxial growth of gallium nitride thin films on A-Plane sapphire by molecular beam epitaxy
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献