Electrical detection of mobile skyrmions with 100% tunneling magnetoresistance in a racetrack-like device

Author:

Zhao MengqiORCID,Chen AitianORCID,Huang Pei-Yuan,Liu Chen,Shen LaichuanORCID,Liu JiahaoORCID,Zhao LeORCID,Fang Bin,Yue Wen-Cheng,Zheng DongxingORCID,Wang Ledong,Bai Hao,Shen KaORCID,Zhou YanORCID,Wang Shasha,Liu EnlongORCID,He Shikun,Wang Yong-LeiORCID,Zhang XixiangORCID,Jiang WanjunORCID

Abstract

AbstractMagnetic skyrmions are topological spin textures that are regarded as promising information carriers for next-generation spintronic memory and computing devices. For practical applications, their deterministic generation, manipulation, and efficient detection are the most critical aspects. Although the generation and manipulation of skyrmions have been extensively studied, efficient electrical detection of mobile skyrmions by using techniques that are compatible with modern magnetic memory technology, remains to be adequately addressed. Here, through integrating magnetic multilayers that host nanoscale skyrmions, together with the magnetic tunnel junctions (MTJ), we demonstrate the electrical detection of skyrmions by using the tunneling magnetoresistance (TMR) effect with a TMR ratio that reaches over 100% at room temperature. By building prototype three-terminal racetrack-like devices, we further show the electrical detection of mobile skyrmions by recording the time-dependent TMR ratios. Along with many recent developments, our results could advance the development of skyrmionic memory and logic devices.

Publisher

Springer Science and Business Media LLC

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