Thermally induced crystallization in NbO2 thin films-Reference-Cited by-同舟云学术

Thermally induced crystallization in NbO2 thin films

Published:2016-09 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Zhang Jiaming,Norris Kate J.,Gibson Gary,Zhao Dongxue,Samuels Katy,Zhang Minxian Max,Yang J. Joshua,Park Joonsuk,Sinclair Robert,Jeon Yoocharn,Li Zhiyong,Williams R. Stanley

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep34294.pdf

Reference25 articles.

1. Kim, S. et al. Ultrathin (<10 nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications. VLSI Technology 2012 Symposium 155–156 (2012).

2. Jung, K. et al. Electrically induced conducting nanochannels in an amorphous resistive switching niobium oxide film. Applied Physics Letters 97, 233509 (2010).

3. Bae, J. et al. Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films. Applied Physics Letters 100, 062902 (2012).

4. Matthew, D. P. & Williams, R. S. Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices. Nanotechnology 23, 215202 (2012).

5. Cha, E. et al. Nanoscale (~10 nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode. IEDM Tech. Dig. 268–271 (2013).

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