Ultralow contact resistance between semimetal and monolayer semiconductors-Reference-Cited by-同舟云学术

Ultralow contact resistance between semimetal and monolayer semiconductors

Published:2021-05-12 Issue:7858 Volume:593 Page:211-217
ISSN:0028-0836
Container-title:Nature
language:en
Short-container-title:Nature

Author:

Shen Pin-Chun^ORCID,Su Cong,Lin Yuxuan^ORCID,Chou Ang-Sheng,Cheng Chao-Ching,Park Ji-Hoon^ORCID,Chiu Ming-Hui^ORCID,Lu Ang-Yu,Tang Hao-Ling,Tavakoli Mohammad Mahdi,Pitner Gregory,Ji Xiang,Cai Zhengyang^ORCID,Mao Nannan,Wang Jiangtao,Tung Vincent,Li Ju^ORCID,Bokor Jeffrey^ORCID,Zettl Alex,Wu Chih-I,Palacios Tomás,Li Lain-Jong^ORCID,Kong Jing^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41586-021-03472-9.pdf

Reference56 articles.

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3. Akinwande, D. et al. Graphene and two-dimensional materials for silicon technology. Nature 573, 507–518 (2019).

4. Louie, S. G. & Cohen, M. L. Electronic structure of a metal-semiconductor interface. Phys. Rev. B 13, 2461–2469 (1976).

5. Nishimura, T., Kita, K. & Toriumi, A. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface. Appl. Phys. Lett. 91, 123123 (2007).

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