Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

Author:

Wintersteller Simon,Yarema Olesya,Kumaar Dhananjeya,Schenk Florian M.,Safonova Olga V.ORCID,Abdala Paula M.ORCID,Wood VanessaORCID,Yarema MaksymORCID

Abstract

AbstractThe reversible phase transitions in phase-change memory devices can switch on the order of nanoseconds, suggesting a close structural resemblance between the amorphous and crystalline phases. Despite this, the link between crystalline and amorphous tellurides is not fully understood nor quantified. Here we use in-situ high-temperature x-ray absorption spectroscopy (XAS) and theoretical calculations to quantify the amorphous structure of bulk and nanoscale GeTe. Based on XAS experiments, we develop a theoretical model of the amorphous GeTe structure, consisting of a disordered fcc-type Te sublattice and randomly arranged chains of Ge atoms in a tetrahedral coordination. Strikingly, our intuitive and scalable model provides an accurate description of the structural dynamics in phase-change memory materials, observed experimentally. Specifically, we present a detailed crystallization mechanism through the formation of an intermediate, partially stable ‘ideal glass’ state and demonstrate differences between bulk and nanoscale GeTe leading to size-dependent crystallization temperature.

Publisher

Springer Science and Business Media LLC

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