Author:
Ikyo A. B.,Marko I. P.,Hild K.,Adams A. R.,Arafin S.,Amann M.-C.,Sweeney S. J.
Publisher
Springer Science and Business Media LLC
Reference16 articles.
1. Andreev, A. D. & Donetsky, D. V. Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers. Appl. Phys. Lett. 74, 2743–2745 (1999).
2. Kim, J. G., Shterengas, L., Martinelli, R. U. & Belenky, G. L. High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers. Appl. Phys. Lett. 83, 1926–1928 (2003).
3. Grau, M., Lin, C., Dier, O., Lauer, C. & Amann, M. C. Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers. Appl. Phys. Lett. 87, 241104 (2005).
4. Murdin, B. N. Key issues for mid–infrared emission in Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences, 359 (1780), 459 (2001).
5. Bachmann, A., Kashani-Shirazi, K., Arafin, S. & Amann, M. C. GaSb-Based VCSEL with buried tunnel junction for emission around 2.3 μm. IEEE Journal of Selected Topics in Quantum Electronics, 15 (3), 933–940 (2009).
Cited by
37 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献