A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices
Author:
Funder
Korea Research Institute of Standards and Science
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-33728-w.pdf
Reference54 articles.
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3. Postek, M. T. & Vladár, A. E. Modeling for accurate dimensional scanning electron microscope metrology: Then and now. Scanning 33, 111–125, https://doi.org/10.1002/sca.20238 (2011).
4. Gambino, J. P., Adderly, S. A. & Knickerbocker, J. U. An overview of through-silicon-via technology and manufacturing challenges. Microelectron. Eng. 135, 73–106, https://doi.org/10.1016/j.mee.2014.10.019 (2015).
5. Vartanian, V. et al. Metrology needs for through-silicon via fabrication. J. Micro/Nanolith. MEMS MOEMS 13, 011206-1-9, https://doi.org/10.1117/1.JMM.13.1.011206 (2014).
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