Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE-Reference-Cited by-同舟云学术

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Published:2017-04-11 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Li Xin,Jordan Matthew B.,Ayari Taha,Sundaram Suresh,El Gmili Youssef,Alam Saiful,Alam Muhbub,Patriarche Gilles,Voss Paul L.,Paul Salvestrini Jean,Ougazzaden Abdallah

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-00865-7.pdf

Reference31 articles.

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3. Meng, J. H. et al. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition. Nanoscale 7, 16046–16053, doi: 10.1039/c5nr04490a (2015).

4. Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722–726, doi: 10.1038/nnano.2010.172 (2010).

5. Kim, S. M. et al. Synthesis of large-area multilayer hexagonal boron nitride for high material performance. Nat. Commun. 6, 8662, doi: 10.1038/ncomms9662 (2015).

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