A new critical growth parameter of H2/CH4 gas flow ratio and mechanistic model for SiC nanowire synthesis via Si substrate carbonization
Author:
Funder
National Science Foundation of Korea
Publisher
Springer Science and Business Media LLC
Link
https://www.nature.com/articles/s41598-024-81254-9.pdf
Reference41 articles.
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3. Gupta, A., Paramanik, D., Varma, S. & Jacob, C. CVD growth and characterization of 3C-SiC thin films. Bull. Mater. Sci. 27, 445–451 (2004).
4. Liu, S. et al. Synthesis of $$\beta$$-SiC nanowires via a facile CVD method and their photoluminescence properties. RSC Adv. 6, 24267–24272 (2016).
5. Li, J. & Steckl, A. Nucleation and void formation mechanisms in SiC thin film growth on Si by carbonization. J. Electrochem. Soc. 142, 634 (1995).
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1. The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide;Applied Sciences;2025-06-23
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