Author:
Hussain Zainab,Patole Shashikant P.,Shaikh Shoyebmohamad F.,Lokhande P. E.,Pathan Habib M.
Abstract
AbstractUnderstanding the metal-semiconductor heterostructure interface is crucial for the development of spintronic devices. One of the prospective candidates and extensively studied semiconductors is molybdenum disulfide (MoS$$_{2}$$
2
). Herein, utilizing Kerr microscopy, we investigated the impact of thick MoS$$_{2}$$
2
on the magnetic properties of the 10 nm Co layer. A comparative study on $$\hbox {Co}/\hbox {MoS}_{2}$$
Co
/
MoS
2
and Co/Si shows that coercivity increased by 77% and the Kerr signal decreased by 26% compared to Co grown on Si substrate. In addition, the Co domain structure significantly changed when grown on MoS$$_{2}$$
2
. The plausible reason for the observed magnetic behavior can be that the Co interacts differently at the interface of MoS$$_{2}$$
2
as compared to Si. Therefore, our studies investigate the interfacial effect on the magnetic properties of Co grown on thick MoS$$_{2}$$
2
layer. Furthermore, our results will help in developing next-generation spintronic devices.
Funder
Researchers Supporting Project of King Saud University, Riyadh, Saudi Arabia
Publisher
Springer Science and Business Media LLC