Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-01449-1.pdf
Reference52 articles.
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2. Gupta, S. & Gong, X. et al. New materials for post-Si computing: Ge and GeSn devices. MRS Bulletin 39, 678–686, doi: 10.1557/mrs.2014.163 (2014).
3. Gupta, S., Vincent, B. et al. GeSn channel nMOSFETs: Material potential and technological outlook. Symp. VLSI Technol., Dig. Tech. pp. 95–96 (2012).
4. Fang, Y. C. & Chen, K. Y. et al. N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility. ACS Appl. Mater. Interfaces 7, 26374–80, doi: 10.1021/acsami.5b08518 (2015).
5. Soref, R. Mid-infrared photonics in silicon and germanium. Nat. Photonics 4, 495–497, doi: 10.1038/nphoton.2010.171 (2010).
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