Author:
Wang Dengkui,Gao Xian,Tang Jilong,Fang Xuan,Fang Dan,Wang Xinwei,Lin Fengyuan,Wang Xiaohua,Chen Rui,Wei Zhipeng
Abstract
AbstractRapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Youth Foundation of Changchun University of Science and Technology
Shenzhen Fundamental Research Program
Developing Project of Science and Technology of Jilin Province
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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