First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-43583-y.pdf
Reference42 articles.
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2. Shih, H.-Y. et al. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs. Scientific reports 5, 13671 (2015).
3. Suihkonen, S., Pimputkar, S., Speck, J. S. & Nakamura, S. Infrared absorption of hydrogen-related defects in ammonothermal GaN. Applied Physics Letters 108, 202105 (2016).
4. Ma, H. et al. GaN crystals prepared through solid-state metathesis reaction from NaGaO2 and BN under high pressure and high temperature. Journal of Alloys and Compounds 509, L124–L127 (2011).
5. Takeuchi, S. et al. Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN. Journal of Applied Physics 118, 245306 (2015).
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