Atomic structure and passivated nature of the Se-treated GaAs(111)B surface
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Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-19560-2.pdf
Reference42 articles.
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2. Carpenter, M. S., Melloch, M. R., Lundstrom, M. S. & Tobin, S. P. Effects of Na4S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs pn diodes. Appl. Phys. Lett. 52, 2157–2159 (1988).
3. Carpenter, M. S., Melloch, M. R. & Dungan, T. E. Schottky barrier formation on (NH4)2S-treated n- and p-type (100)GaAs. Appl. Phys. Lett. 53, 66–68 (1988).
4. Sandroff, C. J., Hedge, M. S., Farrow, L. A., Chang, C. C. & Harbison, J. P. Electronic passivation of GaAs surfaces through the formation of arsenic-sulfur bonds. Appl. Phys. Lett. 54, 362–364 (1990).
5. Fan, J., Oigawa, H. & Nannichi, Y. The effect of (NH4)2S treatment on the interface characteristics of GaAs MIS structures. Jpn. J. Appl. Phys. 27, L1331–L1333 (1988).
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