Publisher
Springer Science and Business Media LLC
Reference34 articles.
1. Zhao, C. et al. Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics. Nano Lett. 16, 4616–4623 (2016).
2. Tchernycheva, M. et al. InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based P-contact. Nano Lett. 14, 2456–2465 (2014).
3. Guo, W., Banerjee, A., Bhattacharya, P. & Ooi, B. S. InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon. Appl. Phys. Lett. 98, 96–99 (2011).
4. Holmes, M. J., Choi, K., Kako, S., Arita, M. & Arakawa, Y. Room-temperature triggered single photon emission from a III-nitride site-controlled nanowire quantum dot. Nano Lett. 14, 982–986 (2014).
5. Deshpande, S., Heo, J., Das, A. & Bhattacharya, P. Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire. Nat. Comm. 4, 1675 (2013).
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献