On the insulator-to-metal transition in titanium-implanted silicon-Reference-Cited by-同舟云学术

On the insulator-to-metal transition in titanium-implanted silicon

Published:2018-03-07 Issue:1 Volume:8 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Liu Fang,Wang Mao^ORCID,Berencén Yonder,Prucnal Slawomir,Engler Martin,Hübner René,Yuan Ye,Heller René,Böttger Roman,Rebohle Lars,Skorupa Wolfgang,Helm Manfred,Zhou Shengqiang

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-018-22503-6.pdf

Reference39 articles.

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2. Said, A. J. et al. Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes. Appl. Phys. Lett 99, 073503 (2011).

3. Hu, S. et al. Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing. Semicond. Sci. Technol 27, 102002 (2012).

4. Luque, A. & Martí, A. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels. Phys. Rev. Lett 78, 5014 (1997).

5. Antolín, E. et al. Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material. Appl. Phys. Lett 94, 042115 (2009).

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