Impact of tensile strain on low Sn content GeSn lasing-Reference-Cited by-同舟云学术

Impact of tensile strain on low Sn content GeSn lasing

Published:2019-01-22 Issue:1 Volume:9 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Rainko Denis,Ikonic Zoran,Elbaz Anas,von den Driesch Nils^ORCID,Stange Daniela,Herth Etienne,Boucaud Philippe,El Kurdi Moustafa,Grützmacher Detlev,Buca Dan

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-018-36837-8.pdf

Reference33 articles.

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2. Homewood, K. P. & Lourenço, M. A. Optoelectronics: The rise of the GeSn laser. Nature Photonics 9, 78–79 (2015).

3. Wirths, S. et al. Lasing in direct-bandgap GeSn alloy grown on Si. Nature Photonics 9, 88–92 (2015).

4. El Kurdi, M., Fishman, G., Sauvage, S. & Boucaud, P. Band structure and optical gain of tensile-strained germanium based on a 30 band k·p formalism. Journal of Applied Physics 107, 013710 (2010).

5. Taraci, J. et al. Simple chemical routes to diamond-cubic germanium-tin alloys. Applied Physics Letters 78, 3607–3609 (2001).

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