Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics-Reference-Cited by-同舟云学术

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

Published:2019-07-16 Issue:1 Volume:9 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Fatahilah Muhammad Fahlesa,Yu Feng^ORCID,Strempel Klaas,Römer Friedhard,Maradan Dario,Meneghini Matteo^ORCID,Bakin Andrey,Hohls Frank,Schumacher Hans Werner,Witzigmann Bernd,Waag Andreas,Wasisto Hutomo Suryo

Funder

Deutsche Forschungsgemeinschaft

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-019-46186-9.pdf

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4. She, X., Huang, A. Q., Lucia, O. & Ozpineci, B. Review of Silicon Carbide Power Devices and Their Applications. IEEE Transactions on Industrial Electronics 64, 8193–8205 (2017).

5. de Paula, W. J. et al. A review on gallium nitride switching power devices and applications. in 2017 Brazilian Power Electronics Conference (COBEP) 1–7 (IEEE, 2017).

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