Reduction of charge offset drift using plasma oxidized aluminum in SETs

Abstract

AbstractAluminum oxide ($${\text {AlO}}_x$$ AlO x )-based single-electron transistors (SETs) fabricated in ultra-high vacuum (UHV) chambers using in situ plasma oxidation show excellent stabilities over more than a week, enabling applications as tunnel barriers, capacitor dielectrics or gate insulators in close proximity to qubit devices. Historically, $${\text {AlO}}_x$$ AlO x -based SETs exhibit time instabilities due to charge defect rearrangements and defects in $${\text {AlO}}_x$$ AlO x often dominate the loss mechanisms in superconducting quantum computation. To characterize the charge offset stability of our $${\text {AlO}}_x$$ AlO x -based devices, we fabricate SETs with sub-1 e charge sensitivity and utilize charge offset drift measurements (measuring voltage shifts in the SET control curve). The charge offset drift ($$\Delta {Q_0}$$ Δ Q 0 ) measured from the plasma oxidized $${\text {AlO}}_x$$ AlO x SETs in this work is remarkably reduced (best $$\Delta {Q_0}=0.13 \, \hbox {e} \, \pm \, 0.01 \, \hbox {e}$$ Δ Q 0 = 0.13 e ± 0.01 e over $$\approx 7.6$$ ≈ 7.6 days and no observation of $$\Delta {Q_0}$$ Δ Q 0 exceeding $$1\, \hbox {e}$$ 1 e ), compared to the results of conventionally fabricated $${\text {AlO}}_x$$ AlO x tunnel barriers in previous studies (best $$\Delta {Q_0}=0.43 \, \hbox {e} \, \pm \, 0.007 \, \hbox {e}$$ Δ Q 0 = 0.43 e ± 0.007 e over $$\approx 9$$ ≈ 9 days and most $$\Delta {Q_0}\ge 1\, \hbox {e}$$ Δ Q 0 ≥ 1 e within one day). We attribute this improvement primarily to using plasma oxidation, which forms the tunnel barrier with fewer two-level system (TLS) defects, and secondarily to fabricating the devices entirely within a UHV system.