Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques-Reference-Cited by-同舟云学术

Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques

Published:2018-11 Issue:11 Volume:1 Page:582-588
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Wang Mengxing,Cai Wenlong,Zhu Daoqian,Wang Zhaohao,Kan Jimmy,Zhao Zhengyang^ORCID,Cao Kaihua,Wang Zilu,Zhang Youguang,Zhang Tianrui,Park Chando,Wang Jian-Ping,Fert Albert,Zhao Weisheng^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.nature.com/articles/s41928-018-0160-7.pdf

Reference50 articles.

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2. Ikeda, S. et al. Magnetic tunnel junctions for spintronic memory and beyond. IEEE Trans. Elect. Dev. 54, 991–1002 (2006).

3. Kent, A. D. Spintronics: Perpendicular all the way. Nat. Mater. 9, 699–700 (2010).

4. Kent, A. D. & Worledge, D. C. A new spin on magnetic memories. Nat. Nanotech. 10, 187–191 (2015).

5. Wang, K. L., Alzate, J. G. & Khalili Amiri, P. Low-power non-volatile spintronic memory: STT-RAM and beyond. J. Phys. D 46, 074003 (2013).

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