Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials
Link
https://www.nature.com/articles/s41928-022-00890-z.pdf
Reference34 articles.
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2. Lanza, M., Smets, Q., Huyghebaert, C. & Li, L.-J. Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices. Nat. Commun. 11, 5689 (2020).
3. Liu, Y. et al. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. Nature 557, 696–700 (2018).
4. Wang, Y. et al. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Nature 568, 70–74 (2019).
5. Kang, K. et al. Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures. Nature 550, 229–233 (2017).
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