A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures-Reference-Cited by-同舟云学术

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Published:2011-07-10 Issue:8 Volume:10 Page:625-630
ISSN:1476-1122
Container-title:Nature Materials
language:en
Short-container-title:Nature Mater

Author:

Lee Myoung-Jae,Lee Chang Bum,Lee Dongsoo,Lee Seung Ryul,Chang Man,Hur Ji Hyun,Kim Young-Bae,Kim Chang-Jung,Seo David H.,Seo Sunae,Chung U-In,Yoo In-Kyeong,Kim Kinam

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://www.nature.com/articles/nmat3070.pdf

Reference29 articles.

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4. Moller, S., Perlov, C., Jackson, W., Taussig, C. & Forrest, S. R. A polymer/semiconductor write-once read-many-times memory. Nature 426, 166–169 (2003).

5. Lee, M-J. et al. Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. Nano Lett. 9, 1476–1481 (2009).

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