Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep17372.pdf
Reference23 articles.
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2. Yamada, M., Narukawa, Y. & Mukai, T. Phosphor free high-luminous-efficiency white light-emitting diodes composed of InGaN multi-quantum well. J. Appl. Phys. 41, L246–L248 (2002).
3. Damilano, B., Grandjean, N., Pernot, C. & Massies, J. Monolithic white light-emitting diodes based on InGaN/GaN multiple-quantum wells. J. Appl. Phys. 40, L918–L920 (2001).
4. Shei, S. C. et al. Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes. Jpn. J. Appl. Phys. 45, 2463–2466 (2006).
5. Wang, X. H. et al. White light-emitting diodes based on a single InGaN emission layer. Appl. Phys. Lett. 91, 161912 (2007).
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