1. King, R. R., Karam, N. H. & Haddad, M. Multijunction photovoltaic cells and panels using a silicon or silicon–germanium active substrate cell for space and terrestrial applications. US Patent- US 6340788 B1 (2002).
2. Cressler, J. D. & Niu, G. Silicon–germanium heterojunction bipolar transistors (Artech Hause, Boston London, 2002).
3. Tanaka, T. et al. Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures. Appl. Phys. Lett. 100, 222102 (2012).
4. Currie, M. T. et al. Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates. J. Vac. Sci. Technol. B 19, 2268–2279 (2001).
5. Abrosimov, N. V., Rossolenko, S. N., Thieme, W., Gerhardt, A. & Schröder, W. Czochralski growth of Si- and Ge-rich SiGe single crystals. J. Cryst. Growth 174, 182–186 (1997).