Author:
Mohsin Muhammad,Neumaier Daniel,Schall Daniel,Otto Martin,Matheisen Christopher,Lena Giesecke Anna,Sagade Abhay A.,Kurz Heinrich
Abstract
AbstractGraphene has been considered as a promising material for opto-electronic devices, because of its tunable and wideband optical properties. In this work, we demonstrate electro-refractive phase modulation in graphene at wavelengths from 1530 to 1570 nm. By integrating a gated graphene layer in a silicon-waveguide based Mach-Zehnder interferometer, the key parameters of a phase modulator like change in effective refractive index, insertion loss and absorption change are extracted. These experimentally obtained values are well reproduced by simulations and design guidelines are provided to make graphene devices competitive to contemporary silicon based phase modulators for on-chip applications.
Publisher
Springer Science and Business Media LLC
Reference35 articles.
1. Winzer, P. J. & Essiambre, R. Advanced optical modulation formats. Proc. IEEE 94, 952–985 (2006).
2. Gnauck, A. H. & Winzer, P. J. Optical phase-shift-keyed transmission. J. Lightwave Technol. 23, 115 (2005).
3. Xiao, X. et al. High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization. Opt. Express 21, 4116–4125 (2013).
4. Reed, G. T., Mashanovich, G., Gardes, F. Y. & Thomson, D. J. Silicon optical modulators. Nature Photon. 4, 518–526 (2010).
5. Reed, G. T. et al. Recent breakthroughs in carrier depletion based silicon optical modulators. Nanophotonics 0, 1–18 (2013).
Cited by
93 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献