Hysteresis in Single-Layer MoS2 Field Effect Transistors-Reference-Cited by-同舟云学术

Hysteresis in Single-Layer MoS2 Field Effect Transistors

Published:2012-05-23 Issue:6 Volume:6 Page:5635-5641
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Late Dattatray J.¹,Liu Bin¹,Matte H. S. S. Ramakrishna²,Dravid Vinayak P.¹,Rao C. N. R.²

Affiliation:

1. Department of Materials Science and Engineering and International Institute of Nanotechnology, Northwestern University, Evanston, Illinois 60208, United States

2. Chemistry and Physics of Materials Unit, CSIR Centre of Excellence in Chemistry and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560064, India

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn301572c

Reference32 articles.

1. Quasiparticle dynamics in graphene

2. The rise of graphene

3. Electric Field Effect in Atomically Thin Carbon Films

4. Single-Layer MoS2 Phototransistors

5. Flat transistors get off the ground

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