Hot-Wire Chemical Vapor Deposition of Chalcogenide Materials for Phase Change Memory Applications-Reference-Cited by-同舟云学术

Hot-Wire Chemical Vapor Deposition of Chalcogenide Materials for Phase Change Memory Applications

Published:2008-05-13 Issue:11 Volume:20 Page:3557-3559
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Abrutis Adulfas¹,Plausinaitiene Valentina¹,Skapas Martynas¹,Wiemer Claudia¹,Salicio Olivier¹,Pirovano Agostino¹,Varesi Enrico¹,Rushworth Simon¹,Gawelda Wojciech¹,Siegel Jan¹

Affiliation:

1. Department of General and Inorganic Chemistry, Vilnius University, 03225 Vilnius, Lithuania, CNR-INFM MDM Laboratory, via C. Olivetti 2, 20041 Agrate Brianza, Italy, STMicroelectronics M6, via C. Olivetti 2, 20041 Agrate Brianza, Italy, SAFC HiTech, Bromborough, Wirral, CH62 3QF, United Kingdom, and Laser Processing Group, Instituto de Óptica, CSIC, Serrano 121, E-28006 Madrid, Spain

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm8004584

Reference14 articles.

1. Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology

2. A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

3. EuroAsia Semiconductors News; February 7, 2008; www.euroasiasemiconductor.com.

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