Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory-Reference-Cited by-同舟云学术

Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

Published:2022-11-02 Issue:45 Volume:14 Page:51137-51148
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Toprasertpong Kasidit¹^ORCID,Tahara Kento¹,Hikosaka Yukinobu²,Nakamura Ko²,Saito Hitoshi²,Takenaka Mitsuru¹^ORCID,Takagi Shinichi¹

Affiliation:

1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

2. Fujitsu Semiconductor Memory Solution Limited, 3-9-18 Shinyokohama, Kouhoku, Yokohama 222-0033, Japan

Funder

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c15369

Reference49 articles.

1. Development of highly reliable ferroelectric random access memory and its Internet of Things applications

2. Ferroelectricity in hafnium oxide thin films

3. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

4. Ferroelectricity in Simple Binary ZrO2 and HfO2

5. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

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