Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory
Author:
Affiliation:
1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
2. Fujitsu Semiconductor Memory Solution Limited, 3-9-18 Shinyokohama, Kouhoku, Yokohama 222-0033, Japan
Funder
Core Research for Evolutional Science and Technology
Japan Society for the Promotion of Science
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.2c15369
Reference49 articles.
1. Development of highly reliable ferroelectric random access memory and its Internet of Things applications
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3. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications
4. Ferroelectricity in Simple Binary ZrO2 and HfO2
5. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
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