Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes-Reference-Cited by-同舟云学术

Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes

Published:2019-03-20 Issue:4 Volume:6 Page:915-923
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Jiang Jialin¹,Xue Muyu²³,Lu Ching-Ying³,Fenrich Colleen S.²^ORCID,Morea Matthew³^ORCID,Zang Kai³,Gao Jianfeng¹,Cheng Ming¹,Zhang Yi¹,Kamins Theodore I.³,Harris James S.²³,Sun Junqiang¹^ORCID

Affiliation:

1. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China

2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

3. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.8b01553

Reference42 articles.

1. Roadmap of optical communications

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3. Deep learning with coherent nanophotonic circuits

4. Integrated optofluidics: A new river of light

5. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip

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